Datasheet4U Logo Datasheet4U.com

2ED21091S06F Datasheet - Infineon

2ED21091S06F - 650V half bridge gate driver

The 2ED21091S06F is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels.

Based on Infineon’s SOI-technology there is an excellent ruggedness and noise immunity with capability to maintain operational logic at negative voltages of up t

2ED21091S06F Features

* Unique Infineon Thin-Film-Silicon On Insulator (SOI)-technology

* Negative VS transient immunity of 100 V

* Floating channel designed for bootstrap operation

* Operating voltages (VS node) upto + 650 V

* Maximum bootstrap voltage (VB node) of + 675 V

2ED21091S06F-Infineon.pdf

Preview of 2ED21091S06F PDF
2ED21091S06F Datasheet Preview Page 2 2ED21091S06F Datasheet Preview Page 3

Datasheet Details

Part number:

2ED21091S06F

Manufacturer:

Infineon ↗

File Size:

778.59 KB

Description:

650v half bridge gate driver.

📁 Related Datasheet

📌 All Tags