Datasheet4U Logo Datasheet4U.com

2ED21091S06F 650V half bridge gate driver

📥 Download Datasheet Datasheet Preview Page 1

Description

2ED21091S06F 2ED21091S06F 650 V half bridge gate driver with integrated bootstrap diode .
The 2ED21091S06F is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels.

📥 Download Datasheet

Preview of 2ED21091S06F PDF
datasheet Preview Page 2 datasheet Preview Page 3

Features

* Unique Infineon Thin-Film-Silicon On Insulator (SOI)-technology
* Negative VS transient immunity of 100 V
* Floating channel designed for bootstrap operation
* Operating voltages (VS node) upto + 650 V
* Maximum bootstrap voltage (VB node) of + 675 V

Applications

* Driving IGBTs, enhancement mode N-Channel MOSFETs in various power electronic applications. Typical Infineon recommendations are as below:
* Motor drives, general purpose inverters having TRENCHSTOP™ IGBT6 or 600 V EasyPACK™ modules or its equivalent power stages
* Refrigeration com

2ED21091S06F Distributors

📁 Related Datasheet

2ED020I12-F 2ED300C17 2EDL1S 2EDL1SC 2EDL1SCM 2EDL1SM

📌 All Tags

2ED21091S06F 650V half bridge gate driver Infineon
Infineon 2ED21091S06F-like datasheet
2ED21094S06J
2ED2109S06F
2ED2104S06F
2ED21064S06J
2ED2106S06F