2ED21091S06F
Features
- Unique Infineon Thin-Film-Silicon On Insulator (SOI)-technology
- Negative VS transient immunity of 100 V
- Floating channel designed for bootstrap operation
- Operating voltages (VS node) upto + 650 V
- Maximum bootstrap voltage (VB node) of + 675 V
- Integrated ultra-fast, low resistance bootstrap diode
- Logic operational up to
- 11 V on VS Pin
- Negative voltage tolerance on inputs of
- 5 V
- Independent under voltage lockout for both channels
- Schmitt trigger inputs with hysteresis
- 3.3 V, 5 V and 15 V input logic patible
- Maximum supply voltage of 25 V
- Interlocking function with internal 540 ns dead time and programmable up to 2.7 us with external resistor
- The dual function DT/SD input turns off both channels
- Ro HS pliant
Product summary
VS_OFFSET = 650 V max. Io+pk / Io-pk (typ.) = + 0.29 A/
- 0.7 A VCC = 10 V to 20 V Internal deadtime = 540 ns typ. t ON / t OFF (typ.) = 740 ns/ 200 ns
Packages
DSO-8
Potential applications
Driving IGBTs, enhancement mode...
