• Part: 2ED21094S06J
  • Description: 650V half bridge gate driver
  • Manufacturer: Infineon
  • Size: 1.28 MB
Download 2ED21094S06J Datasheet PDF
Infineon
2ED21094S06J
Features - Unique Infineon Thin-Film-Silicon On Insulator (SOI)-technology - Negative VS transient immunity of 100 V - Floating channel designed for bootstrap operation - Operating voltages (VS node) upto + 650 V - Maximum bootstrap voltage (VB node) of + 675 V - Integrated ultra-fast, low resistance bootstrap diode - Logic operational up to - 11 V on VS Pin - Negative voltage tolerance on inputs of - 5 V - Independent under voltage lockout for both channels - Schmitt trigger inputs with hysteresis - 3.3 V, 5 V and 15 V input logic patible - Maximum supply voltage of 25 V - Dual package options of DSO-8 and DSO-14 - High and low voltage pins separated for maximum creepage and clearance (2ED21094S06J version) - Separate logic and power ground with the 2ED21094S06J version - Interlocking function with internal 540 ns dead time and programmable up to 5 us with external resistor (2ED21094S06J only) - Shutdown input turns off both channels - Ro HS pliant Product summary VS_OFFSET = 650 V max...