Part number:
33CN10N
Manufacturer:
File Size:
829.32 KB
Description:
Power-transistor.
* N-channel, normal level
* Excellent gate charge x R DS(on) product (FOM)
* Very low on-resistance R DS(on) Product Summary VDS RDS(on),max (TO252) ID 100 V 33 mW 27 A
* 175 °C operating temperature
* Pb-free lead plating; RoHS compliant
* Qualif
33CN10N
829.32 KB
Power-transistor.
📁 Related Datasheet
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200 V - 1,000 V Three Phase Bridge
9.0 A - 10.0 A Forward Current 70 ns - 3000 ns Recovery Time
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200 V - 1,000 V Three Phase Bridge
9.0 A - 10.0 A Forward Current 70 ns - 3000 ns Recovery Time
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..
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(VMI)
..
200 V - 1,000 V Three Phase Bridge
9.0 A - 10.0 A Forward Current 70 ns - 3000 ns Recovery Time
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