Datasheet4U Logo Datasheet4U.com

70S600P7 - MOSFET

Description

.

.

.

.

Features

  • Extremely low losses due to very low FOM RDS(on).
  • Qg and RDS(on).
  • Eoss.
  • Excellent thermal behavior.
  • Integrated ESD protection diode.
  • Low switching losses (Eoss).
  • Product validation acc. JEDEC Standard Benefits.
  • Cost competitive technology.
  • Lower temperature.
  • High ESD ruggedness.
  • Enables efficiency gains at higher switching frequencies.
  • Enables high power density designs and small form factors Potenti.

📥 Download Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IPD70R600P7S MOSFET 700VCoolMOSªP7PowerTransistor CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies. ThelatestCoolMOS™P7isanoptimizedplatformtailoredtotargetcost sensitiveapplicationsinconsumermarketssuchascharger,adapter, lighting,TV,etc. ThenewseriesprovidesallthebenefitsofafastswitchingSuperjunction MOSFET,combinedwithanexcellentprice/performanceratioandstateof theartease-of-uselevel.Thetechnologymeetshighestefficiency standardsandsupportshighpowerdensity,enablingcustomersgoing towardsveryslimdesigns.
Published: |