AIGBE40N65F5 Datasheet - Infineon

AIGBE40N65F5 High speed FAST IGBT

AIGBE40N65F5 Features

* C(TAB)

* Best-in-Class efficiency in hard switching and resonant topologies

* 650V breakdown voltage

* Low gate charge QG

* Maximum junction temperature 175°C

* Dynamically stress tested

* Qualified according to AEC-Q101

* Pb-free lead plati

Datasheet Details

AIGBE40N65F5

1.67 MB

High speed fast igbt.

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