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AIGW50N65F5 Datasheet - Infineon

AIGW50N65F5 IGBT

AIGW50N65F5 Features

* High speed F5 technology offering:

* Best-in-Class efficiency in hard switching and resonant topologies

* 650V breakdown voltage

* Low gate charge QG

* Maximum junction temperature 175°C

* Dynamically stress tested

* Qualified according to

AIGW50N65F5 Datasheet (1.75 MB)

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Datasheet Details

Part number:

AIGW50N65F5

Manufacturer:

Infineon ↗

File Size:

1.75 MB

Description:

Igbt.

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