AUIRF5210S

Power MOSFET

Infineon

AUIRF5210S Features

* Advanced Process Technology

* P-Channel MOSFET

* Ultra Low On-Resistance

* Dynamic dv/dt Rating

* Fast Switching

* Fully Avalanche Rated

* Repetitive Avalanche Allowed up to Tjmax

* Lead-Free, RoHS Compliant

* Automotive Qualified

* Description Specifica

AUIRF5210S General Description

Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are wel.

AUIRF5210S Datasheet (290.87 KB)