AUIRF7309Q Datasheet - Infineon

AUIRF7309Q Dual N/P-Channel MOSFET

Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are wel.

AUIRF7309Q Features

* Advanced Planar Technology

* Low On-Resistance

* Logic Level Gate Drive

* Dual N and P Channel MOSFET

* Dynamic dv/dt Rating

* 150°C Operating Temperature

* Fast Switching

* Lead-Free, RoHS Compliant

* Automotive Qualified

* AUTOMOTIVE GRADE AUIRF7309Q

AUIRF7309Q Datasheet (438.36 KB)