Description
AUTOMOTIVE GRADE .
Specifically designed for Automotive applications, this Cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve.
Features
* Advanced Planar Technology
* Low On-Resistance
* Logic-Level Gate Drive
* Dynamic dv/dt Rating
* 175°C Operating Temperature
* Fast Switching
* Fully Avalanche Rated
* Repetitive Avalanche Allowed up to Tjmax
* Lead-Free, RoHS Compliant
* Automotive Qualifie
Applications
* this Cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extreme
