BGS12P2L6 Datasheet - Infineon

SPDT General purpose Switch

BGS12P2L6 Features

* High linearity up to 37 dBm input power

* Low insertion loss and high port to port isolation up to 6 GHz

* Low current consumption

* On-chip control logic

* Ultra low profile leadless plastic package

* RoHS and WEEE compliant package 0.7 x 1.1 mm2

BGS12P2L6 General Description

The BGS12P2L6 is a general purpose RF MOS power switch, designed to cover a broad range of high power applications from 0.05 to 6 GHz, mainly in the transmit path of GSM, WCDMA and LTE mobile phones. The chip integrates on-chip CMOS logic driven by a simple, single-pin CMOS or TTL compatible control.

BGS12P2L6 Datasheet (853.28 KB)