BSB008NE2LX n-Channel Power MOSFET

Infineon

Description

MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSTM Power-MOSFET, 25 V BSB008NE2LX Data Sheet Rev.2.0 Final Power Management.
Features. Optimized for e-fuse and OR-ing application. Ultra low Rdson in CanPAK-MX footprint. Low profile (.

📥 Download Datasheet

BSB008NE2LX Datasheet Preview — Preview of BSB008NE2LX PDF

Datasheet Specifications

Part number: BSB008NE2LX
Manufacturer: Infineon ↗
File Size: 1.42 MB
Datasheet: BSB008NE2LX_Infineon.pdf
Description: n-Channel Power MOSFET

Applications

* CanPAK MX-size Drain Drain Table 1 Key Performance Parameters Parameter Value Unit VDS 25 V RDS(on),max 0.8 mΩ ID 180 A Qoss 74 nC Qg(0V. .10V) 258 nC Gate Source Type / Ordering Code BSB008NE2LX Package MG-WDSON-2 Marking 04E2 Related Links - 1) CanPAKTM uses DirectFET ®

BSB008NE2LX Distributors

📁 Related Datasheet

BSB01503HA3-00CGE BSB01703HA3-00CAJ BSB0203HA3-00CER BSBE1 BSBE2 BSBN2

📌 All Tags

BSB008NE2LX n-Channel Power MOSFET Infineon

Infineon BSB008NE2LX-like datasheet