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BSZ0501NSI MOSFET

BSZ0501NSI Description

MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSTM5 Power-MOSFET, 30 V BSZ0501NSI Data Sheet Rev.2.0 Final Power Management.
Features. Optimized for high performance buck converters. Monolithic integrated Schottky-like diode. Very low on-resistance.

BSZ0501NSI Features

* Optimized for high performance buck converters
* Monolithic integrated Schottky-like diode
* Very low on-resistance RDS(on) @ VGS=4.5 V
* 100% avalanche tested
* N-channel

BSZ0501NSI Applications

* Pb-free lead plating; RoHS compliant
* Halogen-free according to IEC61249-2-21 Table 1 Key Performance Parameters Parameter Value Unit VDS 30 V RDS(on),max 2.0 mΩ ID 40 A QOSS 18 nC QG(0V. .4.5V) 11.4 nC OptiMOSTM5 Power-MOSFET, 30 V BSZ0501NSI TSDSON-8 FL (enla

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