BSZ100N06LS3G Power MOSFET

Infineon

Description

BSZ100N06LS3 G OptiMOS 3 Power-Transistor TM .

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Datasheet Specifications

Part number: BSZ100N06LS3G
Manufacturer: Infineon ↗
File Size: 269.47 KB
Datasheet: BSZ100N06LS3G_Infineon.pdf
Description: Power MOSFET

Features

* Ideal for high frequency switching and sync. rec.
* Optimized technology for DC/DC converters
* Excellent gate charge x R DS(on) product (FOM)
* N-channel, logic level
* 100% avalanche tested
* Pb-free plating; RoHS compliant
* Qualified acco

Applications

* Halogen-free according to IEC61249-2-21 Type BSZ100N06LS3 G Product Summary V DS R DS(on),max ID 60 10 20 V mΩ A Package Marking PG-TSDSON-8 100N06L Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID V GS=10 V, T C=25 °C2)

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