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BSZ123N08NS3G Power MOSFET

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Description

Type BSZ123N08NS3 G OptiMOSTM3 Power-Transistor Package * Optimized technology for DC/DC converters * Excellent gate charge x R DS(o.

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Applications

* Halogen-free according to IEC61249-2-21 Type BSZ123N08NS3 G Product Summary V DS R DS(on),max ID 80 12.3 40 V mΩ A Package Marking PG-TSDSON-8 123N08N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID V GS=10 V, T C=25 °C

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