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BSZ160N10NS3G Power MOSFET

BSZ160N10NS3G Description

BSZ160N10NS3 G OptiMOSTM3 Power-Transistor .

BSZ160N10NS3G Features

* Ideal for high frequency switching
* Optimized technology for DC/DC converters
* Excellent gate charge x R DS(on) product (FOM)
* N-channel, normal level
* 100% avalanche tested
* Pb-free plating; RoHS compliant
* Qualified according to JEDEC

BSZ160N10NS3G Applications

* Halogen-free according to IEC61249-2-21 Product Summary V DS R DS(on),max ID 100 16 40 PG-TSDSON-8 V mΩ A Type BSZ160N10NS3 G Package PG-TSDSON-8 Marking 160N10N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID V GS=10 V

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