CYRS1069G Datasheet - Infineon

CYRS1069G 16-Mb Static RAM

4 2 Selection guide5 3 Pin configuration 6 4 Maximum ratings 7 5 Operating range 8 6 DC electrical characteristics9 7 Capacitance 10 8 Thermal resistance 11 9 AC test loads and waveforms 12 10 Data retention 13 10.1 Data retention characteristics13 10.2 Data retention waveform 13 11 AC switching cha.

CYRS1069G 16-Mb Static RAM with ECC and RADSTOP™ technology 2M × 8 Radiation performance Radiation data - Total dose =200 Krad - Embedded error-correcting code (ECC) for single-bit error correction[1, 2] - Soft error rate (both heavy ion and proton) Heavy ions  1 × 10-10 upsets/bit-day - Neutron = 1.5 × 1011 N/cm2 - Dose rate: > 3.0 × 108 (rad(Si)/s) (R/W) > 2.0 × 109 (rad(Si)/s) (Static) - Latch up immunity > 60 MeV.cm2/mg (95°C) Processing flows - V Gr.

CYRS1069G Features

* Temperature ranges - Military/Space:

* 55°C to 125°C

* High speed - tAA = 10 ns

* Low active power - ICC = 90 mA at 10 ns (typical)

* Low CMOS standby power - ISB2 = 20 mA (typical)

* 1.0 V data retention

* Automatic power-down when deselected

CYRS1069G-Infineon.pdf