CYRS1069G Datasheet 16-Mb Static RAM

Manufacturer: Infineon

CYRS1069G 16-mb static ram by Infineon - Datasheet Preview

Datasheet Details

Part number	CYRS1069G
Manufacturer	Infineon
File Size	320.64 KB
Description	16-Mb Static RAM
Datasheet	CYRS1069G Datasheet

Overview

CYRS1069G 16-Mb Static RAM with ECC and RADSTOP™ technology 2M × 8 Radiation performance • Radiation data - Total dose =200 Krad - Embedded error-correcting code (ECC) for single-bit error correction[1, 2] - Soft error rate (both heavy ion and proton) Heavy ions  1 × 10-10 upsets/bit-day - Neutron = 1.5 × 1011 N/cm2 - Dose rate: • > 3.0 × 108 (rad(Si)/s) (R/W) • > 2.0 × 109 (rad(Si)/s) (Static) - Latch up immunity > 60 MeV.

Key Features

Temperature ranges - Military/Space:.
55°C to 125°C.
High speed - tAA = 10 ns.
Low active power - ICC = 90 mA at 10 ns (typical).
Low CMOS standby power - ISB2 = 20 mA (typical).
1.0 V data retention.
Automatic power-down when deselected.
Transistor-transistor logic (TTL) compatible inputs and outputs.
Easy memory expansion with CE and OE features.
Available in Gold plated lead 36-pin ceramic flat package.

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