D1481N
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Rectifier diode.
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D1481 - 2SD1481
(NEC)
..
DATA SHEET
SILICON POWER TRANSISTOR
2SD1481
NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMP.
D1485 - 2SD1485
(Panasonic Semiconductor)
Power Transistors
2SD1485
Silicon NPN triple diffusion planar type
For high power amplification Complementary to 2SB1054
Unit: mm
q
q q q
16.2±0.5.
D1486 - 2SD1486
(Panasonic)
..
.
D1400 - 2SD1400
(Sanyo)
..
.
D14006 - 18-bit Static Shift Register
(Hitachi)
Unit: mm
19.20 20.32 Max 14 8 6.30 7.40 Max 1
2.39 Max
1.30
7 7.62
0.51 Min
2.54 Min 5.06 Max
2.54 ± 0.25
0.48 ± 0.10
0.25 – 0.05 0° – 15°
+ 0.
D14008 - 4-bit Full Adder
(Hitachi)
19.20 20.00 Max 16 9 7.40 Max 6.30
Unit: mm
1 1.3
1.11 Max
8
0.51 Min
2.54 Min 5.06 Max
7.62
2.54 ± 0.25
0.48 ± 0.10
0.25 – 0.05 0° – 15°
Hit.
D1402 - 2SD1402
(SavantIC)
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1402
..
DESCRIPTION ·With TO-3PN package ·High spe.
D1403 - 2SD1403
(Wing Shing)
2SD1403
GENERAL DESCRIPTION
Silicon Diffused Power Transistor
Highvoltage,high-speed switching npn transistors in a plastic envelope with integrated.
D1404 - Silicon NPN Power Transistor
(INCHANGE)
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
DESCRIPTION ·High Collector Current Capability ·High Collector Power Dissipation Capability ·.
D1405 - 2SD1405
(Toshiba)
:
——
A
SILICON NPN TRIPLE DIFFUSED TYPE
AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS.
FEATURES . High DC Current Gain of 200 to 1200 at VC E=5V, I.