D5810N
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Rectifier diode.
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Tvj = -40°C Tvj max VRRM 400 V 600 V 9100 A
Elektrische Eigenschaften / .
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Silicon NPN transistor epitaxial type D5850
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D5888S ÎåͨµÀÂí´ïÇý¶¯ ç ·
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A
B C
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2
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D5002UK - METAL GATE RF SILICON FET
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FG
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D H K
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isc Silicon NPN Power Transistor
2SD5011
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