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DF80R12W2H3F_B11 Datasheet - Infineon

IGBT

DF80R12W2H3F_B11 Features

* CoolSiC (TM) Schottky diode gen 5

* High speed IGBT H3

* Low switching losses Mechanical Features

* 3 kV AC 1min insulation

* Al2O3 substrate with low thermal resistance

* Integrated NTC temperature sensor

* Compact design

* PressFIT

DF80R12W2H3F_B11 Datasheet (614.72 KB)

Preview of DF80R12W2H3F_B11 PDF

Datasheet Details

Part number:

DF80R12W2H3F_B11

Manufacturer:

Infineon ↗

File Size:

614.72 KB

Description:

Igbt.
DF80R12W2H3F_B11 EasyPACK Modul mit schnellem Trench/Feldstopp High-Speed 3 IGBT und SiC Diode und PressFIT / NTC EasyPACK module with fast Trench/Fie.

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Stock and price

Distributor
Infineon Technologies AG
DF80R12W2H3FB11BPSA1
0 In Stock
Qty : 30 units
Unit Price : $74.94

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DF80R12W2H3F_B11 IGBT Infineon

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