Datasheet4U Logo Datasheet4U.com

F5-75R06KE3_B5 Datasheet - Infineon

F5-75R06KE3_B5 IGBT

Technische Information / Technical Information IGBT-Module IGBT-modules F5-75R06KE3_B5 EconoPACK™3 Modul mit Trench/Feldstopp IGBT3 und Emitter Controlled 3 Diode und PressFIT / NTC EconoPACK™3 module with Trench/Fieldstop IGBT3 and Emitter Controlled 3 diode and PressFIT / NTC Vorläufige Daten / Preliminary Data VCES = 600V IC nom = 75A / ICRM = 150A Typische Anwendungen Solar Anwendungen Elektrische Eigenschaften Trench IGBT 3 Niedriges VCEsat Mechanische Eige.

F5-75R06KE3_B5 Features

* Trench IGBT 3

* Low VCEsat Mechanical Features

* Integrated NTC temperature sensor

* Copper Base Plate

* PressFIT Contact Technology Module Label Code Barcode Code 128 DMX - Code prepared by: CM approved by: RS Content of the Code Module Serial Number Modu

F5-75R06KE3_B5 Datasheet (956.58 KB)

Preview of F5-75R06KE3_B5 PDF
F5-75R06KE3_B5 Datasheet Preview Page 2 F5-75R06KE3_B5 Datasheet Preview Page 3

Datasheet Details

Part number:

F5-75R06KE3_B5

Manufacturer:

Infineon ↗

File Size:

956.58 KB

Description:

Igbt.

📁 Related Datasheet

F5001 RF POWER VDMOS TRANSISTOR (Polyfet RF Devices)

F5001H INTELIGENT POWER SWITCH (Fuji Electric)

F5019 Froide (CSF)

F501D 600V Depletion-Mode Power MOSFET (Perfect Intelligent)

F5033 INTELLIGENT POWER MOSFET (Fuji Electric)

F50D1G41LB 1.8V 1-Gbit SPI-NAND Flash Memory (ESMT)

F50D1G41LB-50YG2M 1.8V 1 Gbit SPI-NAND Flash Memory (ESMT)

F50D1G41LB-50YG2ME 1.8V 1 Gbit SPI-NAND Flash Memory (ESMT)

TAGS

F5-75R06KE3_B5 IGBT Infineon

F5-75R06KE3_B5 Distributor