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FD1000R33HE3-K

IGBT-modules

FD1000R33HE3-K Features

* High DC stability

* High short-circuit capability

* Low switching losses

* Low VCEsat

* Tvj op = 150°C

* VCEsat with positive temperature coefficient Mechanical Features

* AlSiC base plate for increased thermal cycling capability

* P

FD1000R33HE3-K Datasheet (579.12 KB)

Preview of FD1000R33HE3-K PDF

Datasheet Details

Part number:

FD1000R33HE3-K

Manufacturer:

Infineon ↗

File Size:

579.12 KB

Description:

Igbt-modules.
FD1000R33HE3-K IHM-B Modul mit schnellem Trench/Feldstopp IGBT3 und Emitter Controlled 3 Diode IHM-B module with fast Trench/Fieldstop IGBT3 and Emitt.

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FD1000R33HE3-K IGBT-modules Infineon

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