FD1000R33HE3-K Datasheet | Infineon

Features - High DCstability - Highshort-circuitcapability - Lowswitchinglosses - Low VCEsat - Tvjop=150°C - VCEsatwithpositivetemperaturecoefficient Mechanical Features - Al Si C base plate for increased thermal cycling capability - Packagewith CTI>600 - IHMBhousing - Isolatedbaseplate Module Label Code Barcode Code128 DMX-Code Contentofthe Code Module Serial Number Module Material Number Production Order Number Datecode(Production Year) Datecode(Production Week) Digit 1-5 6-11 12-19 20-21 22-23 Datasheet .infineon. Pleasereadthe Important Noticeand Warningsattheendofthisdocument V3.2 2019-07-24 IGBT,Brems-Chopper/IGBT,Brake-Chopper Höchstzulässige Werte/Maximum Rated Values Kollektor-Emitter-Sperrspannung Collector-emittervoltage Tvj = -40°C Tvj = 150°C Kollektor-Dauergleichstrom Continuous DCcollectorcurrent TC = 95°C, Tvj max = 150°C Periodischer Kollektor-Spitzenstrom Repetitivepeakcollectorcurrent t P = 1 ms Gate-Emitter-Spitzenspannung Gate-emitterpeakvoltage VCES ICDC ICRM VGES 3300 3300 1000 +/-20 V A A V Charakteristische Werte/Characteristic Values Kollektor-Emitter-Sättigungsspannung Collector-emittersaturationvoltage IC = 1000 A VGE = 15 V Gate-Schwellenspannung Gatethresholdvoltage IC = 48,0 m A, VCE = VGE, Tvj = 25°C Tvj = 25°C Tvj = 125°C Tvj = 150°C Gateladung...