* High DC stability
* High short-circuit capability
* Low VCEsat
* Unbeatable robustness
* Tvj op = 150°C
* VCEsat with positive temperature coefficient Mechanical Features
* AlSiC base plate for increased thermal cycling capability
FD1000R33HL3-K Datasheet (600.60 KB)
FD1000R33HL3-K
600.60 KB
Igbt.
FD1000R33HL3-K IHM-B Modul mit Trench/Feldstopp IGBT3 und Emitter Controlled 3 Diode IHM-B module with Trench/Fieldstop IGBT3 and Emitter Controlled 3.
📁 Related Datasheet
FD1000R33HE3-K IGBT-modules (Infineon)
FD1000R17IE4 IGBT (Infineon)
FD1000R17IE4D_B2 IGBT (Infineon)
FD1000A 4-COM 51-SEG LCD Display Driver (Finechips)
FD1000FH-56 Diode (Mitsubishi Electric Semiconductor)
FD1000FV-90 Diode (Mitsubishi Electric Semiconductor)
FD1000FX-90 Diode (Mitsubishi Electric Semiconductor)
FD10JK10 Compact High-Current and Low VF Surface Mounting Device (Origin)
FD10JK3 Compact High-Current and Low VF Surface Mounting Device (Origin)
FD10JK4 Compact High-Current and Low VF Surface Mounting Device (Origin)
