FD1000R33HL3-K
Key Features
- HighDCstability
- Highshort-circuitcapability
- Unbeatablerobustness
- Tvjop=150°C
- VCEsatwithpositivetemperaturecoefficient MechanicalFeatures
- AlSiC base plate for increased thermal cycling capability
- PackagewithCTI>600
- IHMBhousing
- di/dt tP ≤ 10 µs, Tvj = 150°C Wärmewiderstand,ChipbisGehäuse
