* High DC stability
* High dynamic robustness
* High short-circuit capability
* Low VCEsat
* Trench IGBT 3
* VCEsat with positive temperature coefficient Mechanical Features
* AlSiC base plate for increased thermal cycling capability
FD800R45KL3-K_B5 Datasheet (540.63 KB)
FD800R45KL3-K_B5
540.63 KB
Igbt.
FD800R45KL3-K_B5
hochisolierendes Modul mit Trench/Feldstopp IGBT3 und Emitter Controlled 3 Diode highly insulated module with Trench/Fieldstop IGBT3 .
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