FF2000UXTR33T2M1

MOSFET

Infineon

FF2000UXTR33T2M1 Features

* Electrical features - VDSS = 3300 V - IDN = 1000 A / IDRM = 2000 A - Tvj,op = 175°C - Low switching losses - High current density - Low inductive design

* Mechanical features - High power density - Package with CTI > 600 - High creepage and clearance distances - AlSiC base plate fo

FF2000UXTR33T2M1 General Description

- Datasheet www.infineon.com Please read the sections "Important notice" and "Warnings" at the end of this document Revision 1.00 2024-04-16 FF2000UXTR33T2M1 XHP™2 module Table of contents Table of contents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ..

FF2000UXTR33T2M1 Datasheet (687.16 KB)