FF900R12IP4 Datasheet | Infineon

Features - Extended Operation Temperature Tvjop - High DCStability - High Short Circuit Capability, Self Limiting Short Circuit Current - Unbeatable Robustness - VCEsatwithpositive Temperature Coefficient - Low VCEsat Mechanical Features - 4k VAC1min Insulation - Packagewith CTI>400 - High Creepageand Clearance Distances - High Powerand Thermal Cycling Capability - High Power Density - Substratefor Low Thermal Resistance Contentofthe Code Module Serial Number Module Material Number Production Order Number Datecode(Production Year) Datecode(Production Week) dateofpublication:2013-11-05 revision:2.4 1 Module Label Code Barcode Code128 Digit 1-5 6-11 12-19 20-21 22-23 DMX-Code preparedby:AC approvedby:MS Technische Information/Technical Information IGBT-Module IGBT-modules Vorläufige Daten Preliminary Data IGBT,Wechselrichter/IGBT,Inverter Höchstzulässige Werte/Maximum Rated Values Kollektor-Emitter-Sperrspannung Collector-emittervoltage Kollektor-Dauergleichstrom Continuous DCcollectorcurrent Periodischer Kollektor-Spitzenstrom Repetitivepeakcollectorcurrent Gesamt-Verlustleistung Totalpowerdissipation Gate-Emitter-Spitzenspannung Gate-emitterpeakvoltage Tvj = 25°C TC = 100°C, Tvj max = 175°C t P = 1 ms TC = 25°C, Tvj max = 175°C VCES 1200 900 1800 5,10 +/-20 min. Tvj = 25°C Tvj = 125°C Tvj = 150°C VCE sat VGEth QG RGint Cies Cres ICES IGES Tvj = 25°C Tvj = 125°C Tvj = 150°C Tvj = 25°C Tvj = 125°C Tvj = 150°C Tvj = 25°C Tvj = 125°C Tvj = 150°C Tvj = 25°C Tvj = 125°C Tvj = 150°C td on 5,0 typ. 1,70 2,00 2,10 5,8 6,40 1,2 54,0 2,80 0,20 0,22 0,22 0,14 0,15 0,15 0,70 0,80 0,85 0,20 0,40 0,45 71,0 100 105 125 160 175 3600 14,0 150 max. 2,05 V V V V µC Ω n F n F m A n A µs µs µs µs µs µs µs µs µs µs µs µs m J m J m J m J m J m J A V A A k W V IC nom ICRM Ptot VGES...