FP15R12W1T4_B3
Key Features
- LowSwitchingLosses
- TrenchIGBT4
- VCEsatwithpositiveTemperatureCoefficient
- LowVCEsat MechanicalFeatures
- Al2O3SubstratewithLowThermalResistance
- Compactdesign
- SolderContactTechnology
- Rugged mounting due to integrated mounting clamps ModuleLabelCode BarcodeCode128 DMX-Code preparedby:DK approvedby:MB ContentoftheCode ModuleSerialNumber ModuleMaterialNumber ProductionOrderNumber Datecode(ProductionYear) Datecode(ProductionWeek) Digit 1-5 6-11 12-19 20-21 22-23 dateofpublication:2013-10-03 revision:2.3 ULapproved(E83335) 1 TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules FP15R12W1T4_B3 IGBT,Wechselrichter/IGBT,Inverter HöchstzulässigeWerte/MaximumRatedValues Kollektor-Emitter-Sperrspannung Collector-emittervoltage Tvj = 25°C Kollektor-Dauergleichstrom ContinuousDCcollectorcurrent TC = 100°C, Tvj max = 175°C TC = 25°C, Tvj max = 175°C PeriodischerKollektor-Spitzenstrom Repetitivepeakcollectorcurrent tP = 1 ms Gesamt-Verlustleistung Totalpowerdissipation TC = 25°C, Tvj max = 175 Gate-Emitter-Spitzenspannung Gate-emitterpeakvoltage VorläufigeDaten PreliminaryData VCES IC nom IC ICRM Ptot VGES
