FP35R12W2T4P_B11 Datasheet - Infineon

FP35R12W2T4P_B11 IGBT

FP35R12W2T4P_B11 EasyPIM™ Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled 4 Diode und PressFIT / bereits aufgetragenem Thermal Interface Material EasyPIM™ module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and PressFIT / pre-applied Thermal Interface Material VCES = 1200V IC nom = 35A / ICRM = 70A Typische Anwendungen Hilfsumrichter Klimaanlagen Motorantriebe Elektrische Eigenschaften Niedrige Schaltverluste Niedriges VCE.

FP35R12W2T4P_B11 Features

* Low switching losses

* Low VCEsat

* Trench IGBT 4

* VCEsat with positive temperature coefficient Mechanical Features

* Al2O3 substrate with low thermal resistance

* Compact design

* PressFIT contact technology

* Rugged mounting due t

FP35R12W2T4P_B11-Infineon.pdf