* High DC stability
* High short-circuit capability
* Low switching losses
* Low VCEsat
* Unbeatable robustness
* Tvj op = 150°C
* VCEsat with positive temperature coefficient Mechanical Features
* AlSiC base plate for increased therma
FZ1200R33HE3 Datasheet (510.51 KB)
FZ1200R33HE3
510.51 KB
Igbt-module.
FZ1200R33HE3
IHM-B Modul mit schnellem Trench/Feldstopp IGBT3 und Emitter Controlled 3 Diode IHM-B module with fast Trench/Fieldstop IGBT3 and Emitter.
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