• Part: H25R1202
  • Description: Reverse Conducting IGBT
  • Manufacturer: Infineon
  • Size: 400.40 KB
Download H25R1202 Datasheet PDF
Infineon
H25R1202
Features : - Powerful monolithic Body Diode with very low forward voltage - Body diode clamps negative voltages - Trench and Fieldstop technology for 1200 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - NPT technology offers easy parallel switching capability due to positive temperature coefficient in VCE(sat) - Low EMI - Qualified according to JEDEC1 for target applications - Pb-free lead plating; Ro HS pliant - plete product spectrum and PSpice Models : http://.infineon./igbt/ Applications: - Inductive Cooking - Soft Switching Applications PG-TO-247-3 Type VCE(sat),Tj=25°C Tj,max Marking Package IHW25N120R2 1200V 25A 1.6V 175°C H25R1202 PG-TO-247-3 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage DC collector current TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area (VCE ≤ 1200V, Tj ≤ 175°C) Diode forward current TC = 25°C TC =...