IDDD16G65C6 Datasheet (Infineon) - 650V SiC Schottky Diode

IDDD16G65C6, 650V SiC Schottky Diode

IDDD16G65C6 6th Generation CoolSiC™ 650V SiC Schottky Diode The CoolSiC™ generation G is the leading edge technology from Infineon for the SiC Schottky barrier diodes.

The Infineon proprietary innovative G5 technology was enhanced in G6 by introducing further advancements like a novel Schottky metal system.

The result is a family of products with improved efficiency over all load conditions, resulting from a lower figure of merit (Qc x VF .

The CoolSiC™ Schottky diode V G has been designed to

IDDD16G65C6 Features

* Best in class forward voltage (1.25 V)

* Best in class figure of merit (Qc x VF)

* High dv/dt ruggedness (150 V/ns) Benefits

* System efficiency improvement

* System cost and size savings due to the reduced cooling requirements

* Enabling higher frequency and increased powe