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IDM02G120C5 Diode

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Description

Diode Silicon Carbide Schottky Diode IDM02G120C5 5th Generation CoolSiCâ„¢ 1200 V SiC Schottky Diode Final Data Sheet Rev.2.1, 2021-06-09 Industrial Po.

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Features

* Revolutionary semiconductor material - Silicon Carbide
* No reverse recovery current / No forward recovery
* Temperature independent switching behavior
* Low forward voltage even at high operating temperature
* Tight forward voltage distribution
* Excellent thermal perfor

Applications

* Pb-free lead plating; RoHS compliant Benefits 1 2
* System efficiency improvement over Si diodes
* Enabling higher frequency / increased power density solutions
* System size/cost savings due to reduced heatsink requirements and smaller magnetics
* Reduced EMI
* Highest e

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