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IGW25N120H3

IGBT

IGW25N120H3 Features

* TRENCHSTOPTM technology offering

* best in class switching performance: less than 500µJ total switching losses achievable

* very low VCEsat

* low EMI

* maximum junction temperature 175°C

* qualified according to JEDEC for target applications

* Pb-free

IGW25N120H3 General Description

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 .

IGW25N120H3 Datasheet (2.28 MB)

Preview of IGW25N120H3 PDF

Datasheet Details

Part number:

IGW25N120H3

Manufacturer:

Infineon ↗

File Size:

2.28 MB

Description:

Igbt.
IGBT High speed IGBT in Trench and Fieldstop technology recommended in combination with SiC Diode IDH15S120 IGW25N120H3 1200V high speed switching se.

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TAGS

IGW25N120H3 IGBT Infineon

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