Part number:
IGW25N120H3
Manufacturer:
File Size:
2.28 MB
Description:
Igbt.
IGBT
High speed IGBT in Trench and Fieldstop technology recommended in combination with SiC Diode IDH15S120
IGW25N120H3
1200V high speed switching se.
* TRENCHSTOPTM technology offering
* best in class switching performance: less than 500µJ total switching losses achievable
* very low VCEsat
* low EMI
* maximum junction temperature 175°C
* qualified according to JEDEC for target applications
* Pb-free
IGW25N120H3 Datasheet (2.28 MB)
IGW25N120H3
2.28 MB
Igbt.
IGBT
High speed IGBT in Trench and Fieldstop technology recommended in combination with SiC Diode IDH15S120
IGW25N120H3
1200V high speed switching se.
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