Datasheet4U.com

IGW30N65L5 - IGBT

Infineon

📥 Download Datasheet

IGW30N65L5 Datasheet Preview — Preview of IGW30N65L5 PDF

datasheet Preview Page 2

datasheet Preview Page 3

Datasheet Details

Part number	IGW30N65L5
Manufacturer	Infineon ↗
File Size	1.58 MB
Description	IGBT
Datasheet	IGW30N65L5-Infineon.pdf

IGW30N65L5 Product details

Description

. . .

Features

Low VCE(sat) L5 technology offering.
Very low collector-emitter saturation voltage VCEsat.
Best-in-Class tradeoff between conduction and switching losses.
650V breakdown voltage.
Low gate charge QG.
Maximum junction temperature 175°C.
Qualified according to JEDEC for target.

📁 IGW30N65L5 Similar Datasheet

IGW30N60F - MOSFET (IPS)
IGW03N120H2 - IGBT (Infineon Technologies)
IGW08T120 - IGBT (Infineon Technologies)
IGW15T120 - IGBT (Infineon Technologies)
IGW15T120F - IGBT (IPS)
IGW25T120 - IGBT (Infineon Technologies AG)
IGW40N60F - IGBT (IPS)
IGW40T120 - IGBT (Infineon Technologies)

Other Datasheets by Infineon

IGW30N60H3 - High speed IGBT
IGW30N60T - IGBT
IGW30N60TP - IGBT
IGW30N100T - IGBT
IGW100N60H3 - IGBT
IGW15N120H3 - IGBT

Published: Feb 17, 2016 |