IGW30N65L5 Datasheet - Infineon

IGW30N65L5 IGBT

IGW30N65L5 Features

* Low VCE(sat) L5 technology offering

* Very low collector-emitter saturation voltage VCEsat

* Best-in-Class tradeoff between conduction and switching losses

* 650V breakdown voltage

* Low gate charge QG

* Maximum junction temperature 175°C

* Qualified

Datasheet Details

IGW30N65L5

1.58 MB

Igbt.

📁 Related Datasheet

IGW30N60F MOSFET (IPS)

IGW30N60H3 High speed IGBT (Infineon)

IGW30N60T IGBT (Infineon)

IGW30N60TP IGBT (Infineon)

IGW30N100T IGBT (Infineon)

IGW03N120H2 IGBT (Infineon Technologies)

IGW08T120 IGBT (Infineon Technologies)

IGW100N60H3 IGBT (Infineon)

TAGS

IGW30N65L5 IGBT Infineon

IGW30N65L5 Distributor