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IKB30N65EH5 Datasheet - Infineon

IKB30N65EH5 IGBT

IKB30N65EH5 Features

* C High speed H5 technology offering

* Best-in-Class efficiency in hard switching and resonant topologies

* 650V breakdown voltage

* Low QG

* IGBT copacked with full rated current RAPID 1 fast antiparallel diode

* Maximum junction temperature 175°C

IKB30N65EH5 Datasheet (1.52 MB)

Preview of IKB30N65EH5 PDF
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Datasheet Details

Part number:

IKB30N65EH5

Manufacturer:

Infineon ↗

File Size:

1.52 MB

Description:

Igbt.

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IKB30N65EH5 IGBT Infineon

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