IKB30N65EH5 - IGBT

Infineon

Datasheet Details

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C High speed H5 technology offering.
Best-in-Class efficiency in hard switching and resonant topologies.
650V breakdown voltage.
Low QG.
IGBT copacked with full rated current RAPID 1 fast antiparallel diode.
Maximum junction temperature 175°C.
Pb-free lead plating; RoHS compliant.
Complete product spectrum and PSpice Models: http://www. infineon. com/igbt/ G E C Potential.

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Published: Jun 10, 2020 |