IKP08N65F5 Datasheet - Infineon

IKP08N65F5 IGBT

IKP08N65F5 Features

* C High speed F5 technology offering

* Best-in-Class efficiency in hard switching and resonant topologies

* 650V breakdown voltage

* Low QG

* IGBT copacked with RAPID 1 fast and soft antiparallel diode

* Maximum junction temperature 175°C

* Qualified

Datasheet Details

IKP08N65F5

2.02 MB

Igbt.

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IKP08N65F5 IKP08N65F5 IGBT Infineon

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