* C High speed F5 technology offering
* Best-in-Class efficiency in hard switching and resonant topologies
* 650V breakdown voltage
* Low QG
* IGBT copacked with RAPID 1 fast and soft antiparallel diode
* Maximum junction temperature 175°C
* Qualified
IKP08N65F5 Datasheet (2.02 MB)
IKP08N65F5
2.02 MB
Igbt.
IGBT
High speed 5 FAST IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1 fast and soft antiparallel diode
IKP08N65F5
650V DuoPack IGBT and Diode.
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