IKQ40N120CH3 Datasheet - Infineon

IKQ40N120CH3 IGBT

IKQ40N120CH3 Features

* C High speed H3 technology offers:

* High efficiency in hard switching and resonant topologies

* 10µsec short circuit withstand time at Tvj=175°C

* Easy paralleling capability due to positive temperature coefficient in VCEsat

* Low EMI

* Low Gate Charge QG

Datasheet Details

IKQ40N120CH3

1.59 MB

Igbt.

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