IMBG65R020M2H
Key Features
- Ultra-lowswitchinglosses
- Benchmarkgatethresholdvoltage,VGS(th)=4.5V
- Robustagainstparasiticturn-onevenwith0Vturn-offgatevoltage
- Flexibledrivingvoltageandcompatiblewithbipolardrivingscheme
- Robustbodydiodeoperationunderhardcommutationevents
- .XTinterconnectiontechnologyforbest-in-classthermalperformance Benefits
- Enableshighefficiencyandhighpowerdensitydesigns
- Facilitatesgreateaseofuseandintegration
- ProvidesthebestpriceperformanceratiocomparedtoIndustry’smost ambitiousroadmaps
- Reducesthesize,weightandbillofmaterialsofthesystems
