Datasheet Details
- Part number
- IMBG65R020M2H
- Manufacturer
- Infineon ↗
- File Size
- 1.62 MB
- Datasheet
- IMBG65R020M2H-Infineon.pdf
- Description
- MOSFET
IMBG65R020M2H Description
IMBG65R020M2H MOSFET CoolSiCª MOSFET 650 V G2 Built on Infineon’s robust 2nd generation Silicon Carbide trench technology, the 650 V CoolSiC™ MOSFET .
IMBG65R020M2H Features
* Ultra-low switching losses
* Benchmark gate threshold voltage, VGS(th) = 4.5 V
* Robust against parasitic turn-on even with 0 V turn-off gate voltage
* Flexible driving voltage and compatible with bipolar driving scheme
* Robust body diode operation under ha
IMBG65R020M2H Applications
* SMPS
* Solar PV inverters
* Energy storage and battery formation
* UPS
* EV charging infrastructure
* Motor drives
Product validation
Fully qualified according to JEDEC for Industrial Applications
Please note: The source and driver source pins are no
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