IMBG65R020M2H Datasheet - Infineon

IMBG65R020M2H, MOSFET

IMBG65R020M2H MOSFET CoolSiCª MOSFET 650 V G2 Built on Infineon’s robust 2nd generation Silicon Carbide trench technology, the 650 V CoolSiC™ MOSFET .

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Datasheet Details

Part number:

IMBG65R020M2H

Manufacturer:

Infineon ↗

File Size:

1.62 MB

Description:

MOSFET

Features

* Ultra-low switching losses
* Benchmark gate threshold voltage, VGS(th) = 4.5 V
* Robust against parasitic turn-on even with 0 V turn-off gate voltage
* Flexible driving voltage and compatible with bipolar driving scheme
* Robust body diode operation under ha

Applications

* SMPS
* Solar PV inverters
* Energy storage and battery formation
* UPS
* EV charging infrastructure
* Motor drives Product validation Fully qualified according to JEDEC for Industrial Applications Please note: The source and driver source pins are no

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