Datasheet Details
| Part number | IPC26N10NR |
|---|---|
| Manufacturer | Infineon ↗ |
| File Size | 887.93 KB |
| Description | MOSFET |
| Datasheet |
 IPC26N10NR-Infineon.pdf
|
| Part number | IPC26N10NR |
|---|---|
| Manufacturer | Infineon ↗ |
| File Size | 887.93 KB |
| Description | MOSFET |
| Datasheet |
IPC26N10NR-Infineon.pdf
|
N-channel enhancement mode For dynamic characterization refer to the datasheet of IPP05CN10N G1) AQL 0.65 for visual inspection according to failure catalogue Electrostatic Discharge Sensitive Device according to MIL-STD 883C Die bond: soldered or glued Backside metallization: NiV system Frontside metallization: AlSi system Passivation: nitride (only on edge structure) Power MOS Transistor Chip Table 1 Key Per
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