IPF04N03LAG
Type
Opti MOS®2 Power-Transistor
Package Marking
- Qualified according to JEDEC1) for target applications
- N-channel, logic level
- Excellent gate charge x R DS(on) product (FOM)
- Superior thermal resistance
- 175 °C operating temperature
- Pb-free lead plating; Ro HS pliant
IPD04N03LA G IPF04N03LA G IPS04N03LA G IPU04N03LA G
Product Summary V DS R DS(on),max (SMD version) ID
25 V 3.8 mΩ 50 A
Type
IPD04N03LA
IPF04N03LA
IPS04N03LA
IPU04N03LA
Package Marking
P-TO252-3-11 04N03LA
P-TO252-3-23 04N03LA
P-TO251-3-11 04N03LA
P-TO251-3-1 04N03LA
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
T C=25 °C2)
Pulsed drain current
I D,pulse
T C=100 °C T C=25 °C3)
Avalanche energy, single pulse
E AS
I D=45 A, R GS=25 Ω
Reverse diode dv /dt dv /dt
I D=50 A, V DS=20 V, di /dt =200 A/µs, T j,max=175 °C
Gate source voltage4)
V GS
Power dissipation
P...
