IPG20N06S3L-23 Description
IPG20N06S3L-23 OptiMOS®-T Power-Transistor Product Summary V DS R DS(on),max5) ID 55 23 20 V mΩ.
IPG20N06S3L-23 Key Features
- Dual N-channel Logic Level
- Enhancement mode
- AEC Q101 qualified
- MSL1 up to 260°C peak reflow
- 175°C operating temperature
- Green Product (RoHS pliant)
- 100% Avalanche tested PG-TDSON-8-4
- 1 1 35 20
- 2270 285 270 10 35 40 75
- 11 6 32 4.5