IPT60R105CFD7 Datasheet - Infineon

IPT60R105CFD7 600V Power Transistor

Public IPT60R105CFD7 Final datasheet MOSFET 600V CoolMOS™ CFD7 Power Transistor CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS™ CFD7 is the successor to the CoolMOS™ CFD2 series and is an optimized platform tailored to target soft switching applications such as phase‑shift full‑bridge (ZVS) and LLC. Resulting from reduced gate charge (Qg), best‑in‑class rever.

IPT60R105CFD7 Features

* Ultra‑fast body diode

* Low gate charge

* Best‑in‑class reverse recovery charge (Qrr)

* Improved MOSFET reverse diode dv/dt and diF/dt ruggedness

* Lowest FOM RDS(on)

* Qg and RDS(on)

* Eoss

* Best‑in‑class RDS(on) in SMD and THD packages Benefit

IPT60R105CFD7 Datasheet (1.32 MB)