IPT65R080CFD7 Datasheet - Infineon

IPT65R080CFD7 MOSFET

IPT65R080CFD7 MOSFET 650V CoolMOSª CFD7 SJ Power Device The latest 650 V CoolMOS™ CFD7 extends the voltage class offering of the CFD7 family and is a successor to the 650 V CoolMOS™ CFD2. Resulting from improved switching performance and excellent thermal behavior, 650 V CooMOS™ CFD7 offers highest efficiency in resonant switching topologies, such as LLC and phase-shift-full-bridge (ZVS). As part of Infineon’s fast body diode portfolio, this new product series blends all advantages of a fast sw.

IPT65R080CFD7 Features

* Ultra-fast body diode

* 650V break down voltage

* Best-in-class RDS(on)

* Reduced switching losses

* Low RDS(on) dependency over temperature Benefits

* Excellent hard commutation ruggedness

* Extra safety margin for designs with increased bus

IPT65R080CFD7 Datasheet (1.38 MB)