IPTC068N20NM6 200V Power Transistor

Infineon

Description

Public IPTC068N20NM6 Final datasheet MOSFET OptiMOS™ 6 Power‑Transistor, 200 V .
1 Maxi.

📥 Download Datasheet

IPTC068N20NM6 Datasheet Preview — Preview of IPTC068N20NM6 PDF

Datasheet Specifications

Part number: IPTC068N20NM6
Manufacturer: Infineon ↗
File Size: 1.22 MB
Datasheet: IPTC068N20NM6-Infineon.pdf
Description: 200V Power Transistor

Features

* N‑channel, normal level
* Very low on‑resistance RDS(on)
* Excellent gate charge x RDS(on) product (FOM)
* Very low reverse recovery charge (Qrr)
* High avalanche energy rating
* 175°C operating temperature
* Pb‑free lead plating; RoHS compli

Applications

* Table 1 Key performance parameters Parameter Value Unit VDS 200 V RDS(on),max 6.8 mΩ ID 140 A Qoss 226 nC QG 71 nC Qrr (1000A/μs) 339 nC Part number IPTC068N20NM6 Package PG‑HDSOP‑16 TOLT 16 9 1 8 Drain Pin 9-16, Tab Gate Pin 8 Source Pin 1-7 Marking 068N20N6 Related l

IPTC068N20NM6 Distributors

📁 Related Datasheet

IPT2601 IPT2602

📌 All Tags

IPTC068N20NM6 200V Power Transistor Infineon

Infineon IPTC068N20NM6-like datasheet