IPU090N03LG
Features
- Fast switching MOSFET for SMPS
- Optimized technology for DC/DC converters
- Qualified according to JEDEC for target applications
- N-channel, logic level
- Excellent gate charge x R DS(on) product (FOM)
- Very low on-resistance R DS(on)
- Avalanche rated
- Pb-free plating; Ro HS pliant IPD090N03L G Type
- Avalanche rated
- Pb-free plating; Ro HS pliant IPF090N03L G
1)
Product Summary V DS R DS(on),max ID 30 9 40 V mΩ A
IPS090N03L G
IPU090N03L G
Package Marking
PG-TO252-3-11 090N03L
PG-TO252-3-23 090N03L
PG-TO251-3-11 090N03L
PG-TO251-3-21 090N03L
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID V GS=10 V, T C=25 °C V GS=10 V, T C=100 °C V GS=4.5 V, T C=25 °C V GS=4.5 V, T C=100 °C Pulsed drain current2) Avalanche current, single pulse 3) Avalanche energy, single pulse Reverse diode d v /dt Gate source voltage
1)
Value 40 37 40 30 280 40 40 6 ±20
Unit A
I D,pulse I AS E AS dv /dt V GS
T C=25 °C T...
