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IPW60R099C7 Datasheet - Infineon

IPW60R099C7, MOSFET

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ C7 600V CoolMOS™ C7 Power Transistor IPW60R099C7 Data Sheet Rev.2.0 Final Power Man.
CoolMOS™ C7 is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infi.
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IPW60R099C7-Infineon.pdf

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Datasheet Details

Part number:

IPW60R099C7

Manufacturer:

Infineon ↗

File Size:

1.49 MB

Description:

MOSFET

Features

* Suitable for hard and soft switching (PFC and high performance LLC)
* Increased MOSFET dv/dt ruggedness to 120V/ns
* Increased efficiency due to best in class FOM RDS(on)
* Eoss and RDS(on)
* Qg
* Best in class RDS(on) /package
* Qualified for industrial

Applications

* according to JEDEC (J-STD20 and JESD22) Benefits
* Increased economies of scale by use in PFC and PWM topologies in the application
* Higher dv/dt limit enables faster switching leading to higher efficiency
* Enabling higher system efficiency by lower switching losses

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