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P2000DL45X168 - IGBT

Datasheet Summary

Features

  • Press Pack IGBT with integrated Freewheeling Diode.
  • Long term Short on Fail behavior.
  • High dynamic robustness.
  • High short-circuit capability.
  • Low VCEsat.
  • Trench IGBT 3 Typische Anwendungen.
  • Hochleistungsumrichter.
  • Mittelspannungsantriebe.
  • Modulare Multi- Level Umrichter MMC für HGÜ und Kompensationsanlagen.
  • DC Leistungsschalter Typical.

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Datasheet preview – P2000DL45X168

Datasheet Details

Part number P2000DL45X168
Manufacturer Infineon
File Size 888.01 KB
Description IGBT
Datasheet download datasheet P2000DL45X168 Datasheet
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Full PDF Text Transcription

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Druckkontaktierter IGBT Press Pack IGBT Technische Information / technical information P2000DL45X168 Key Parameters IGBT VCES INOM ICRM Diode VRRM IF IFRM 4500 V 2000 A 4000 A 04(05T00C0=AV65 °C) 3570A 2000A (TC=55°C) 4000A Merkmale  Druckkontaktierter IGBT mit integrierter Freilaufdiode  Stabiler Kurzschluss im Fehlerfall  Hohe dynamische Robustheit  Hohe Kurzschlussrobustheit  Niedriges VCEsat  Trench IGBT 3 Features  Press Pack IGBT with integrated Freewheeling Diode  Long term Short on Fail behavior  High dynamic robustness  High short-circuit capability  Low VCEsat  Trench IGBT 3 Typische Anwendungen  Hochleistungsumrichter  Mittelspannungsantriebe  Modulare Multi- Level Umrichter MMC für HGÜ und Kompensationsanlagen  DC Leistungsschalter Typical Applicatio
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