SGW30N60
SGP30N60 SGW30N60
Fast IGBT in NPT-technology
- 75% lower Eoff pared to previous generation bined with low conduction losses
- Short circuit withstand time
- 10 µs
- Designed for:
- Motor controls
- Inverter
- NPT-Technology for 600V applications offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
PG-TO-220-3-1
PG-TO-247-3
- Qualified according to JEDEC for target applications
- Pb-free lead plating; Ro HS pliant
- plete product spectrum and PSpice Models : http://.infineon./igbt/ Type SGP30N60 SGW30N60 Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25°C TC = 100°C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE ≤ 600V, Tj ≤ 150°C Gate-emitter voltage Avalanche energy, single pulse IC = 30 A, VCC = 50 V, RGE = 25 Ω , start at Tj = 25°C Short circuit withstand time2 VGE = 15V, VCC ≤ 600V, Tj ≤ 150°C Power dissipation TC = 25°C Operating...
