SGW30N60HS
SGP30N60HS SGW30N60HS
High Speed IGBT in NPT-technology
- 30% lower Eoff pared to previous generation
- Short circuit withstand time
- 10 µs
- Designed for operation above 30 k Hz
- NPT-Technology for 600V applications offers:
- parallel switching capability
- moderate Eoff increase with temperature
- very tight parameter distribution
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PG-TO-220-3-1
PG-TO-247-3
High ruggedness, temperature stable behaviour Pb-free lead plating; Ro HS pliant Qualified according to JEDEC1 for target applications plete product spectrum and PSpice Models : http://.infineon./igbt/ VCE 600V 600V IC 30 30 Eoff) 480µJ 480µJ Tj Marking Package PG-TO-220-3-1 PG-TO-247-3
Type SGP30N60HS SGW30N60HS Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25°C TC = 100°C
150°C G30N60HS 150°C G30N60HS Symbol VCE IC
Value 600 41 30
Unit V A
Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE ≤ 600V, Tj ≤ 150°C Avalanche energy single pulse IC = 20A,...
