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SGW30N60HS High Speed IGBT

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Description

SGP30N60HS SGW30N60HS High Speed IGBT in NPT-technology C * 30% lower Eoff compared to previous generation * Short circuit withstand .

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Applications

* offers: - parallel switching capability - moderate Eoff increase with temperature - very tight parameter distribution
* G E PG-TO-220-3-1 PG-TO-247-3 High ruggedness, temperature stable behaviour Pb-free lead plating; RoHS compliant Qualified according to JED

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Infineon SGW30N60HS-like datasheet