IPG16N10S4-61 - Power-Transistor

Infineon Technologies

Datasheet Details

Part number	IPG16N10S4-61
Manufacturer	Infineon ↗ Technologies
File Size	253.56 KB
Description	Power-Transistor
Datasheet	IPG16N10S4-61-InfineonTechnologies.pdf

Dual N-channel Normal Level - Enhancement mode.
AEC Q101 qualified.
MSL1 up to 260°C peak reflow.
175°C operating temperature.
RoHS compliant.
100% Avalanche tested IPG16N10S4-61 Product Summary VDS RDS(on),max3) ID 100 V 61 mW 16 A PG-TDSON-8 87 65 12 34 87 65 Type IPG16N10S4-61 Package PG-TDSON-8 Marking 4N1061 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current one.

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Published: May 30, 2015 |