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ITDE15551D4E - High Power RF LDMOS FET

Download the ITDE15551D4E datasheet PDF. This datasheet also covers the ITDE15551D4 variant, as both devices belong to the same high power rf ldmos fet family and are provided as variant models within a single manufacturer datasheet.

Description

The ITDE15551D4 is a 550-watt, internally matched LDMOS FETs, designed for Multiple ISM applications within frequencies 1.3GHz to 1.5GHz.It can be used in Class AB/B and Class C for both CW and pulse applications in narrowband operation ITDE15551D4 ITDE15551D4E Typical Performance (On Innogra

Features

  • High Efficiency and Linear Gain Operations.
  • Integrated ESD Protection.
  • Internally Matched for Ease of Use.
  • Optimized for Doherty.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (ITDE15551D4-Innogration.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number ITDE15551D4E
Manufacturer Innogration
File Size 504.57 KB
Description High Power RF LDMOS FET
Datasheet download datasheet ITDE15551D4E Datasheet

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Other Datasheets by Innogration

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ITDE15551D4 High Power RF LDMOS FET
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ITDE10700D4E High Power RF LDMOS FET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Innogration (Suzhou) Co., Ltd. Document Number: ITDE15551D4 Preliminary Datasheet V1.0 1.3-1.5GHz, 550W, 40V High Power RF LDMOS FETs Description The ITDE15551D4 is a 550-watt, internally matched LDMOS FETs, designed for Multiple ISM applications within frequencies 1.3GHz to 1.5GHz.It can be used in Class AB/B and Class C for both CW and pulse applications in narrowband operation ITDE15551D4 ITDE15551D4E Typical Performance (On Innogration fixture with device soldered): VDD = 40 Volts, IDQ = 100 mA, Tcase =25 degree C. Frequency Signal Gp (dB) Pout(W) D@Pout (%) 1500MHz CW 12 500 53 1500MHz 100us,10%, Pulsed 12.
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